philips semiconductors product specification thyristors bt258 series logic level general description quick reference data glass passivated, sensitive gate symbol parameter max. max. max. unit thyristors in a plastic envelope, intended for use in general purpose bt258- 500r 600r 800r switching and phase control v drm , repetitive peak off-state 500 600 800 v applications. these devices are v rrm voltages intended to be interfaced directly to i t(av) average on-state current 5 5 5 a microcontrollers, logic integrated i t(rms) rms on-state current 8 8 8 a circuits and other low power gate i tsm non-repetitive peak on-state 75 75 75 a trigger circuits. current pinning - to220ab pin configuration symbol pin description 1 cathode 2 anode 3 gate tab anode limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500r -600r -800r v drm , v rrm repetitive peak off-state - 500 1 600 1 800 v voltages i t(av) average on-state current half sine wave; t mb 111 ?c - 5 a i t(rms) rms on-state current all conduction angles - 8 a i tsm non-repetitive peak half sine wave; t j = 25 ?c prior to on-state current surge t = 10 ms - 75 a t = 8.3 ms - 82 a i 2 ti 2 t for fusing t = 10 ms - 28 a 2 s di t /dt repetitive rate of rise of i tm = 10 a; i g = 50 ma; - 50 a/ m s on-state current after di g /dt = 50 ma/ m s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v v rgm peak reverse gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 2 ?c temperature ak g 123 tab 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. 2 note: operation above 110?c may require the use of a gate to cathode resistor of 1k w or less. october 1997 1 rev 1.200
philips semiconductors product specification thyristors bt258 series logic level thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance - - 2.0 k/w junction to mounting base r th j-a thermal resistance in free air - 60 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 50 200 m a i l latching current v d = 12 v; i gt = 0.1 a - 0.4 10 ma i h holding current v d = 12 v; i gt = 0.1 a - 0.3 6 ma v t on-state voltage i t = 16 a - 1.3 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.4 1.5 v v d = v drm(max) ; i t = 0.1 a; t j = 110 ?c 0.1 0.2 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; 50 100 - v/ m s off-state voltage exponential waveform; r gk = 100 w t gt gate controlled turn-on i tm = 10 a; v d = v drm(max) ; i g = 5 ma; - 2 - m s time di g /dt = 0.2 a/ m s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 100 - m s turn-off time i tm = 12 a; v r = 24 v; di tm /dt = 10 a/ m s; dv d /dt = 2 v/ m s; r gk = 1 k w october 1997 2 rev 1.200
philips semiconductors product specification thyristors bt258 series logic level fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 111?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0123456 0 1 2 3 4 5 6 7 8 a = 1.57 1.9 2.2 2.8 4 bt150 it(av) / a ptot / w tmb(max) / c 125 123 121 119 117 115 113 111 109 conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a bt258 1 10 100 1000 0 40 number of half cycles at 50hz itsm / a 10 20 30 50 60 70 80 t i tsm time i t tj initial = 25 c max 10 100 1000 bt150 10us 100us 1ms 10ms t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 4 8 12 16 20 24 bt150 surge duration / s it(rms) / a -50 0 50 100 150 0 1 2 3 4 5 6 7 8 9 bt258 tmb / c it(rms) / a 111 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt151 tj / c vgt(tj) vgt(25 c) october 1997 3 rev 1.200
philips semiconductors product specification thyristors bt258 series logic level fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 5 10 15 20 25 30 typ bt150+ vt / v it / a max tj = 125 c tj = 25 c vo = 0.99 v rs = 0.0325 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 bt150 tp / s zth j-mb (k/w) t p p t d -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c ih(tj) ih(25 c) 0 50 100 150 1 10 100 1000 tj / c dvd/dt (v/us) rgk = 100 ohms october 1997 4 rev 1.200
philips semiconductors product specification thyristors bt258 series logic level mechanical data dimensions in mm net mass: 2 g fig.13. to220ab; pin 2 connected to mounting base. notes 1. refer to mounting instructions for to220 envelopes. 2. epoxy meets ul94 v0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min october 1997 5 rev 1.200
philips semiconductors product specification thyristors bt258 series logic level definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1997 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. october 1997 6 rev 1.200
|
